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Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling - MaRDI portal

Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling (Q662803)

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scientific article; zbMATH DE number 6009226
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English
Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling
scientific article; zbMATH DE number 6009226

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    Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling (English)
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    24 February 2012
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    molecular-beam epitaxy
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