Three-dimensional modelling of Ge\(_{1-x}\)Si\(_{x}\) by the travelling solvent method: the effect of rotation and misalignment of the sample (Q979613)

Summary: A numerical simulation study is carried out for the crystal growth of Ge\(_{1-x}\)Si\(_x\) by the Travelling Heater Method (THM). The effects of a geometrical misalignment and rotation on the crystal growth are investigated. The full Navier-Stokes equations together with the energy, mass transport and continuity equations are solved numerically using the finite element technique. The application of a crucible rotation and misalignment is shown to have a considerable effect on the buoyancy induced flow. An optimal rotational speed was found that lessened the convective flow and provided a uniform concentration along the growth interface.