The influence of mechanical constraint upon the switching of a ferroelectric memory capacitor

DOI10.1016/j.euromechsol.2008.09.002zbMath1156.74324OpenAlexW2122376340MaRDI QIDQ1006764

D. P. Chu, Ivindra Pane, Norman A. Fleck, John E. Huber

Publication date: 25 March 2009

Published in: European Journal of Mechanics. A. Solids (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.euromechsol.2008.09.002

zbMATH Keywords

stressferroelectricthin filmmodelmemory

Mathematics Subject Classification ID

Control, switches and devices (``smart materials) in solid mechanics (74M05) Finite element methods applied to problems in solid mechanics (74S05) Electromagnetic effects in solid mechanics (74F15)

Cites Work

• Three-dimensional finite element simulations of ferroelectric polycrystals under electrical and mechanical loading
• Effect of geometry upon the performance of a thin film ferroelectric capacitor
• Multi-grain analysis versus self-consistent estimates of ferroelectric polycrystals
• Ferroelectric switching: a micromechanics model versus measured behaviour
• A constitutive model for ferroelectric polycrystals
• Multi-axial electrical switching of a ferroelectric: Theory versus experiment
• On the local and average energy release in polarization switching phenomena