Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations

DOI10.1016/J.MATCOM.2007.10.008zbMath1159.82329OpenAlexW1986216860MaRDI QIDQ1010033

J. Martínez

Publication date: 3 April 2009

Published in: Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.matcom.2007.10.008

zbMATH Keywords

frequency domaintime domainMOSFET compact modelnon-quasi-static effectsurface-potential

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Related Items (2)

A compact quantum surface potential model for a MOSFET device ⋮ Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations

Cites Work

• Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations

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