Modeling, verification and comparison of short-channel double gate and gate-all-around MOSFETs

DOI10.1016/j.matcom.2007.09.011zbMath1159.82331OpenAlexW2059922193MaRDI QIDQ1010035

S. Kolberg, H. Børli, Tor A. Fjeldly

Publication date: 3 April 2009

Published in: Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.matcom.2007.09.011

zbMATH Keywords

conformal mappingMOSFETdouble gategate-all-around2D modeling

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Electro- and magnetostatics (78A30)

Related Items (4)

Impact of geometric, thermal and tunneling effects on nano-transistors ⋮ PERFORMANCE EVALUATION OF SOURCE HETEROJUNCTION STRAINED CHANNEL GATE ALL AROUND NANOWIRE TRANSISTOR ⋮ Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices ⋮ Compact subthreshold current and capacitance modeling of short-channel double-gate MOSFETs

Cites Work

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