Charge distribution on thin semiconducting silicon nanowires

DOI10.1016/J.CMA.2008.02.007zbMath1160.82358OpenAlexW2013069811MaRDI QIDQ1013882

Narayan Aluru, Subrata Mukherjee, Hui Chen

Publication date: 23 April 2009

Published in: Computer Methods in Applied Mechanics and Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.cma.2008.02.007

zbMATH Keywords

finite element methodboundary element methodcharge distributionsemiconducting silicon nanowires

Mathematics Subject Classification ID

Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Statistical mechanics of semiconductors (82D37) Boundary element methods for boundary value problems involving PDEs (65N38)

Cites Work

• Finite parts of singular and hypersingular integrals with irregular boundary source points
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• Numerical Analysis of Nanotube-Based NEMS Devices—Part I: Electrostatic Charge Distribution on Multiwalled Nanotubes
• DYNAMIC ANALYSIS OF MICRO-ELECTRO-MECHANICAL SYSTEMS
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