On a Petrov-Galerkin method for the electrical and thermal behaviour of semiconductor devices in two dimensions

DOI10.1016/0378-4754(87)90072-3zbMath0637.65125OpenAlexW1999830291MaRDI QIDQ1098602

John J. H. Miller

Publication date: 1987

Published in: Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/0378-4754(87)90072-3

zbMATH Keywords

Petrov-Galerkin methodPoisson equationScharfetter-Gummel schemeFourier equationsemiconductor devicesexponentially fitted finite difference approximations

Mathematics Subject Classification ID

Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Laplace operator, Helmholtz equation (reduced wave equation), Poisson equation (35J05) Technical applications of optics and electromagnetic theory (78A55) Partial differential equations of mathematical physics and other areas of application (35Q99) Applications to the sciences (65Z05) Motion of charged particles (78A35)

Cites Work

• On the inclusion of the recombination term in discretizations of the semiconductor device equations
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS
• Unnamed Item

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