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Behavior of the potential at the pn-junction for a model in semiconductor theory

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Publication:1173683
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DOI10.1016/0893-9659(90)90048-GzbMath0759.35048MaRDI QIDQ1173683

Irene Martínez Gamba

Publication date: 25 June 1992

Published in: Applied Mathematics Letters (Search for Journal in Brave)


zbMATH Keywords

boundary behaviorelliptic regularity


Mathematics Subject Classification ID

Smoothness and regularity of solutions to PDEs (35B65) Boundary value problems for second-order elliptic equations (35J25) PDEs in connection with optics and electromagnetic theory (35Q60) Motion of charged particles (78A35) Potentials and capacity, harmonic measure, extremal length and related notions in two dimensions (31A15)


Related Items

2D semiconductor device simulations by WENO-Boltzmann schemes: efficiency, boundary conditions and comparison to Monte Carlo methods



Cites Work

  • Asymptotic behavior at the boundary of a semiconductor device in two space dimensions
  • Uniform Asymptotic Representation of Solutions of the Basic Semiconductor-Device Equations
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