Self-similar solutions for infiltration of dopant into semiconductors

DOI10.1007/BF00375603zbMath0752.35029OpenAlexW1991842416MaRDI QIDQ1181008

William C. Troy, Lambertus A. Peletier

Publication date: 27 June 1992

Published in: Archive for Rational Mechanics and Analysis (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/bf00375603

zbMATH Keywords

concentrations of the impurities and the vacancieshost atomsjumping of impurity atomspair of nonlinear diffusion equations

Mathematics Subject Classification ID

Nonlinear initial, boundary and initial-boundary value problems for linear parabolic equations (35K60) Reaction-diffusion equations (35K57)

Related Items (3)

Self-similar solutions for diffusion in semiconductors ⋮ Self-similar solutions for a free boundary problem in the doping of semiconductors ⋮ Discrete-time methods for equations modelling transport of foreign-atoms in semiconductors

Cites Work

• The existence of similar solutions for some laminar boundary layer problems
• Mathematical analysis of a model for substitutional diffusion

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