High electric field approximation to charge transport in semiconductor devices

DOI10.1016/0893-9659(92)90049-FzbMath0757.65124WikidataQ127012788 ScholiaQ127012788MaRDI QIDQ1195617

Andrés Saúl, Pablo Dmitruk, Luis G. M. Reyna

Publication date: 6 January 1993

Published in: Applied Mathematics Letters (Search for Journal in Brave)

zbMATH Keywords

asymptotic expansionelectric fieldBoltzmann equationcharge transportsemiconductor devicesband structuresLegendre expansionacoustic and optical phononsscattering of electrons

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Diffraction, scattering (78A45) Technical applications of optics and electromagnetic theory (78A55) Spectral, collocation and related methods for initial value and initial-boundary value problems involving PDEs (65M70) Applications to the sciences (65Z05) Motion of charged particles (78A35)

Related Items (10)

On a hierarchy of macroscopic models for semiconductors ⋮ Kinetic boundary layers and fluid-kinetic coupling in semiconductors ⋮ AN INFINITE SYSTEM OF DIFFUSION EQUATIONS ARISING IN TRANSPORT THEORY: THE COUPLED SPHERICAL HARMONICS EXPANSION MODEL ⋮ THE HIGH FIELD ASYMPTOTICS FOR DEGENERATE SEMICONDUCTORS ⋮ ANALYSIS OF A SPHERICAL HARMONICS EXPANSION MODEL OF PLASMA PHYSICS ⋮ High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor ⋮ Diffusive semiconductor moment equations using Fermi-Dirac statistics ⋮ Macroscopic models for ionization in the presence of strong electric fields ⋮ Macroscopic models for semiconductor heterostructures ⋮ An energy-transport model for semiconductors derived from the Boltzmann equation.

Cites Work

• Multidimensional spherical harmonics expansion of Boltzmann equation for transport in semiconductors

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