Inverse average type tetrahedral finite-element schemes for the stationary semiconductor device equations

DOI10.1016/0377-0427(92)90053-ZzbMath0797.65107MaRDI QIDQ1208552

Fawang Liu, John J. H. Miller

Publication date: 16 May 1993

Published in: Journal of Computational and Applied Mathematics (Search for Journal in Brave)

zbMATH Keywords

stationary semiconductor device equationsinverse average tetrahedral finite element schemes

Mathematics Subject Classification ID

Nonlinear initial, boundary and initial-boundary value problems for linear parabolic equations (35K60) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)

Related Items (1)

A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations

Cites Work

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• Numerical simulation of semiconductor devices
• On inequalities of Korn's type. II: Applications to linear elasticity
• Inverse-Average-Type Finite Element Discretizations of Selfadjoint Second-Order Elliptic Problems
• Finite Element Solution of the Fundamental Equations of Semiconductor Devices. I
• ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
• Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models

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