Monte Carlo simulation of semiconductor devices

DOI10.1016/0010-4655(91)90220-FzbMath0875.65103OpenAlexW1986817560MaRDI QIDQ1366079

Geir U. Jensen, Michael Shur, Tor A. Fjeldly, Bjørnar Lund

Publication date: 10 November 1997

Published in: Computer Physics Communications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/0010-4655(91)90220-f

zbMATH Keywords

Monte Carlo simulationVLSI circuitscomputer-aided designsemiconductor devicesHeterostructure Field-Effect Transistors

Mathematics Subject Classification ID

Monte Carlo methods (65C05) PDEs in connection with optics and electromagnetic theory (35Q60) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)

Related Items (1)

Development of a 3D Parallel Finite Element Monte Carlo Simulator for Nano-MOSFETs

Uses Software

• POT4A

Cites Work

• Unnamed Item
• Pseudo-random trees in Monte Carlo
• POT4A - A program for the direct solution of Poisson's equation in complex geometries
• Monte Carlo particle modelling of small semiconductor devices
• Computer simulation of III-V MESFET's, MODFET's and MIS-like FET's
• Simulation of advanced semiconductor devices using supercomputers
• Electronic transport in semiconductors at high energy
• Monte Carlo simulation of charge-carrier behavior in electric fields
• Molecular dynamics extensions of Monte Carlo simulation in semiconductor device modeling
• Monte Carlo calculation of electronic noise in semiconductors
• On the numerical solution of the three-dimensional semiconductor device equations on vector-concurrent computers
• Theory of Impurity Scattering in Semiconductors

This page was built for publication: Monte Carlo simulation of semiconductor devices