Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle
From MaRDI portal
Publication:1396221
DOI10.1007/s001610200082zbMath1029.82045OpenAlexW1964948030MaRDI QIDQ1396221
Vittorio Romano, Giovanni Mascali
Publication date: 30 June 2003
Published in: Continuum Mechanics and Thermodynamics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s001610200082
negative differential conductivityvelocity overshootGaAs semiconductorsKane dispersion approximation
Related Items (11)
Numerical Simulation of a Hydrodynamic Subband Model for Semiconductors Based on the Maximum Entropy Principle ⋮ A hydrodynamic model for covalent semiconductors with applications to GaN and SiC ⋮ A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle ⋮ Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle ⋮ A hydrodynamical model for holes in silicon semiconductors ⋮ Electron-phonon hydrodynamical model for semiconductors ⋮ Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle ⋮ Quantum corrections to the semiclassical hydrodynamical model of semiconductors based on the maximum entropy principle ⋮ A hydrodynamical model for holes in silicon semiconductors: the case of non-parabolic warped bands ⋮ Simulation of Gunn oscillations with a non‐parabolic hydrodynamical model based on the maximum entropy principle ⋮ Maximum entropy moment system of the semiconductor Boltzmann equation using Kane's dispersion relation
This page was built for publication: Hydrodynamical model of charge transport in GaAs based on the maximum entropy principle