Identification of contact regions in semiconductor transistors by level-set methods

DOI10.1016/S0377-0427(03)00543-0zbMath1030.80002MaRDI QIDQ1414315

Kazufumi Ito, Weifu Fang

Publication date: 20 November 2003

Published in: Journal of Computational and Applied Mathematics (Search for Journal in Brave)

zbMATH Keywords

Inverse problemLevel-set methodsSemiconductor

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Inverse problems in thermodynamics and heat transfer (80A23)

Related Items (4)

Recovery of an interface from boundary measurement in an elliptic differential equation ⋮ Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model ⋮ RECONSTRUCTION OF SINGULAR SURFACES BY SHAPE SENSITIVITY ANALYSIS AND LEVEL SET METHOD ⋮ Reconstruction of contact regions in semiconductor transistors using Dirichlet-Neumann cost functional approach

Cites Work

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• Reconstruction of a two-dimensional binary obstacle by controlled evolution of a level-set
• Weighted ENO Schemes for Hamilton--Jacobi Equations
• A fast marching level set method for monotonically advancing fronts.
• Level set methods for optimization problems involving geometry and constraints. I: Frequencies of a two-density inhomogeneous drum

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