Numerical problems in semiconductor simulation using the hydrodynamic model: a second-order finite difference scheme.

DOI10.1016/j.jcp.2003.10.002zbMath1036.82028OpenAlexW1975829520MaRDI QIDQ1428666

Riccardo Sacco, Luca Vincenzo Ballestra

Publication date: 29 March 2004

Published in: Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jcp.2003.10.002

Mathematics Subject Classification ID

Finite difference methods applied to problems in fluid mechanics (76M20) Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Statistical mechanics of semiconductors (82D37) Ionized gas flow in electromagnetic fields; plasmic flow (76X05)

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Uses Software

• SHASTA

Cites Work

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• High resolution schemes for hyperbolic conservation laws
• Approximate Riemann solvers, parameter vectors, and difference schemes
• Flux-corrected transport. II: Generalizations of the method
• Assessment of a High Resolution Centered Scheme for the Solution of Hydrodynamical Semiconductor Equations
• High Resolution Schemes and the Entropy Condition
• Riemann Solvers, the Entropy Condition, and Difference
• Extended Hydrodynamical Model of Carrier Transport in Semiconductors
• CROSS-VALIDATION OF NUMERICAL SCHEMES FOR EXTENDED HYDRODYNAMICAL MODELS OF SEMICONDUCTORS
• Flux-corrected transport. I: SHASTA, a fluid transport algorithm that works
• On a viscous-hydrodynamic model for semiconductors: Numerical simulation and stability analysis

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