Oxidation-induced stresses in the isolation oxidation of silicon

DOI10.1023/A:1004737420926zbMath0981.74020OpenAlexW200150711MaRDI QIDQ1577265

S. P. Ferro, Jonathan D. Evans, Michael Vynnycky

Publication date: 21 March 2002

Published in: Journal of Engineering Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1023/a:1004737420926

zbMATH Keywords

finite difference methodlong-wave approximationKeller-box discretisation schemenitride-cap rigidityoxidation-induced stressesreaction-controlled limitsilicon/silicon-oxide interfacetwo-dimensional isolation oxidation of silicon

Mathematics Subject Classification ID

Finite difference methods applied to problems in solid mechanics (74S20) Chemical and reactive effects in solid mechanics (74F25)

Related Items (3)

Stress-Dependent Local Oxidation of Silicon ⋮ Weak solutions for a sixth-order thin film equation ⋮ Group properties and invariant solutions of a sixth-order thin film equation in viscous fluid

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