On the \(N\)-dimensional stationary drift-diffusion semiconductor equations

DOI10.1016/S0362-546X(99)00184-4zbMath0983.35137WikidataQ126311707 ScholiaQ126311707MaRDI QIDQ1588349

Jishan Fan, Hongwei Wu

Publication date: 9 April 2002

Published in: Nonlinear Analysis. Theory, Methods \& Applications. Series A: Theory and Methods (Search for Journal in Brave)

zbMATH Keywords

compensated compactnessthermal effectsemiconductor equations\(L^\infty\)-estimate

Mathematics Subject Classification ID

Related Items (1)

Existence analysis for a simplified transient energy-transport model for semiconductors

Cites Work

• Global solutions of the time-dependent drift-diffusion semiconductor equations
• Le problème de Dirichlet pour les équations elliptiques du second ordre à coefficients discontinus
• Consistency of Semiconductor Modeling: An Existence/Stability Analysis for the Stationary Van Roosbroeck System
• ON THE EXISTENCE OF WEAK SOLUTIONS TO A SYSTEM OF STATIONARY SEMICONDUCTOR EQUATIONS WITH AVALANCHE GENERATION
• Modeling and Analysis of Laser-Beam-Induced Current Images in Semiconductors

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