Numerical discretization of energy-transport model for semiconductors using high-order compact schemes

DOI10.1016/S0893-9659(02)00033-2zbMath1001.82116MaRDI QIDQ1614112

Michel Fournié

Publication date: 3 September 2002

Published in: Applied Mathematics Letters (Search for Journal in Brave)

zbMATH Keywords

numerical discretizationsemiconductorsenergy-transport modelhigh-order compact schemes

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Finite difference methods for boundary value problems involving PDEs (65N06)

Related Items

Energy transport in semiconductor devices, 2D numerical simulation of the MEP energy-transport model with a finite difference scheme, Numerical Schemes for Semiconductors Energy-Transport Models, Discrete duality finite volume schemes for two‐dimensional drift‐diffusion and energy‐transport models, Analysis of numerical schemes for semiconductor energy-transport models, Numerical analysis of DDFV schemes for semiconductors energy-transport models

Cites Work

• Unnamed Item
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• Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
• High‐order compact scheme for the steady stream‐function vorticity equations
• On a hierarchy of macroscopic models for semiconductors
• Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors