Radiation sensitivity modeling technique of sensors' MIS-transistor elements

DOI10.1134/S0005117918010150zbMath1391.93031OpenAlexW2786152397MaRDI QIDQ1641965

A. S. Bakerenkov, Yu. V. Sukhoroslova, B. I. Podlepetsky

Publication date: 20 June 2018

Published in: Automation and Remote Control (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1134/s0005117918010150

zbMATH Keywords

modelsradiation effectsionizing radiationMIS transistor

Mathematics Subject Classification ID

Observability (93B07)

Related Items (1)

Accuracy errors of modeling of MIS-transistor sensor elements

Cites Work

• Integrated hydrogen sensors based on MIS transistor sensitive elements: modeling of characteristics

This page was built for publication: Radiation sensitivity modeling technique of sensors' MIS-transistor elements