Iterative boundary element method for crack analysis of two-dimensional piezoelectric semiconductor

DOI10.1016/j.enganabound.2017.07.002zbMath1403.74264OpenAlexW2740393170MaRDI QIDQ1655978

Qiaoyun Zhang, Guang Tao Xu, Ming-Hao Zhao, Cui Ying Fan

Publication date: 10 August 2018

Published in: Engineering Analysis with Boundary Elements (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.enganabound.2017.07.002

zbMATH Keywords

crackintensity factorselliptical holeiterative boundary element methodpiezoelectric semiconductors

Mathematics Subject Classification ID

Brittle fracture (74R10) Boundary element methods applied to problems in solid mechanics (74S15) Electromagnetic effects in solid mechanics (74F15) Boundary element methods for boundary value problems involving PDEs (65N38)

Related Items (5)

Application of the homotopy analysis method to nonlinear characteristics of a piezoelectric semiconductor fiber ⋮ Analysis of a penny-shaped crack with semi-permeable boundary conditions across crack face in a 3D thermal piezoelectric semiconductor ⋮ An efficient iteration approach for nonlinear boundary value problems in 2D piezoelectric semiconductors ⋮ Nonlinear solutions of PN junctions of piezoelectric semiconductors ⋮ Calculation of Stress Intensity Factors for an Arbitrary Oriented Penny-shaped Crack Under Inner Pressure in an Orthotropic Electroelastic Material

Cites Work

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• Singularity analysis of planar cracks in three-dimensional piezoelectric semiconductors via extended displacement discontinuity boundary integral equation method
• A boundary integral formulation and 2D fundamental solutions for piezoelectric media
• A semi-infinite anti-plane crack in a piezoelectric semiconductor
• A BEM analysis of fracture mechanics in 2D anisotropic piezoelectric solids.
• A mode III crack in a piezoelectric semiconductor of crystals with 6 mm symmetry
• Dynamic Anti-plane Crack Analysis in Functional Graded Piezoelectric Semiconductor Crystals
• Amplification of Ultrasonic Waves in Piezoelectric Semiconductors

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