A mixed-finite volume element coupled with the method of characteristic fractional step difference for simulating transient behavior of semiconductor device of heat conductor and its numerical analysis

DOI10.1007/s10255-017-0721-yzbMath1382.82048OpenAlexW2769363392MaRDI QIDQ1690583

Qing Yang, Yi-Rang Yuan, Tong-jun Sun, Chang-Feng Li

Publication date: 19 January 2018

Published in: Acta Mathematicae Applicatae Sinica. English Series (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s10255-017-0721-y

zbMATH Keywords

numerical simulationmixed finite volume elementmodified characteristic fractional step differencesecond-order estimate in \(L^{2}\) normtransient behavior of three-dimensional semiconductor device

Mathematics Subject Classification ID

Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Statistical mechanics of semiconductors (82D37) Finite element, Rayleigh-Ritz and Galerkin methods for initial value and initial-boundary value problems involving PDEs (65M60) Multigrid methods; domain decomposition for initial value and initial-boundary value problems involving PDEs (65M55) Motion of charged particles (78A35) PDEs in connection with statistical mechanics (35Q82)

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