Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics

DOI10.1016/j.jcp.2017.06.023zbMath1378.82030OpenAlexW2625165163MaRDI QIDQ1691899

Thomas Koprucki, Patricio Farrell, Jürgen Fuhrmann

Publication date: 25 January 2018

Published in: Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.jcp.2017.06.023

zbMATH Keywords

finite volume methodnonlinear diffusionScharfetter-Gummel schemeFermi-Dirac statisticssemiconductor device simulationdegenerate semiconductorsdiffusion enhancementflux discretizationvan Roosbroeck system

Mathematics Subject Classification ID

Related Items (10)

Consistency and convergence for a family of finite volume discretizations of the Fokker–Planck operator ⋮ Mathematical analysis of a thermodynamically consistent reduced model for iron corrosion ⋮ A structure preserving hybrid finite volume scheme for semiconductor models with magnetic field on general meshes ⋮ Highly accurate quadrature-based scharfetter-gummel schemes for charge transport in degenerate semiconductors ⋮ A weighted hybridizable discontinuous Galerkin method for drift-diffusion problems ⋮ Unipolar Drift-Diffusion Simulation of S-Shaped Current-Voltage Relations for Organic Semiconductor Devices ⋮ Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient ⋮ Modeling and simulation of the lateral photovoltage scanning method ⋮ Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations ⋮ The 3D transient semiconductor equations with gradient-dependent and interfacial recombination

Uses Software

• ddfermi

Cites Work

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