Global well-posedness and regularity criteria for epitaxial growth models

DOI10.1016/j.camwa.2017.04.029zbMath1386.82070OpenAlexW2618711623MaRDI QIDQ1704177

Yong Zhou, Ahmed Alsaedi, Jishan Fan, Tasawar Hayat

Publication date: 9 March 2018

Published in: Computers \& Mathematics with Applications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.camwa.2017.04.029

zbMATH Keywords

regularitywell-posednessthin filmepitaxy

Mathematics Subject Classification ID

Smoothness and regularity of solutions to PDEs (35B65) Statistical mechanics of crystals (82D25) Statistical mechanics of superconductors (82D55) Dependence of solutions to PDEs on initial and/or boundary data and/or on parameters of PDEs (35B30) Statistical mechanics of semiconductors (82D37) Initial value problems for higher-order parabolic equations (35K30)

Related Items (6)

Pullback attractor of a non-autonomous order-\(2 \gamma\) parabolic equation for an epitaxial thin film growth model ⋮ Well-posedness and stability for a class of fourth-order nonlinear parabolic equations ⋮ Global well-posedness of weak solutions and a regularity criterion of strong solutions for an epitaxial growth model ⋮ Global dynamics of a fourth-order parabolic equation describing crystal surface growth ⋮ Global well-posedness of solutions for the epitaxy thin film growth model ⋮ Global well-posedness and large time behavior of epitaxy thin film growth model

Cites Work

• Unnamed Item
• Global well-posedness for the 4D epitaxial growth models
• Gradient bounds for a thin film epitaxy equation
• Second-order Convex Splitting Schemes for Gradient Flows with Ehrlich–Schwoebel Type Energy: Application to Thin Film Epitaxy
• Commutator estimates and the euler and navier-stokes equations
• Thin film epitaxy with or without slope selection
• Stability Analysis of Large Time‐Stepping Methods for Epitaxial Growth Models

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