Global well-posedness of weak solutions and a regularity criterion of strong solutions for an epitaxial growth model

DOI10.1016/J.AML.2017.12.023zbMath1408.35184OpenAlexW2782519430MaRDI QIDQ1748590

Xianqiang Yang

Publication date: 11 May 2018

Published in: Applied Mathematics Letters (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.aml.2017.12.023

zbMATH Keywords

weak solutionstrong solutionthin filmepitaxy

Mathematics Subject Classification ID

Smoothness and regularity of solutions to PDEs (35B65) Statistical mechanics of crystals (82D25) Statistical mechanics of semiconductors (82D37) Weak solutions to PDEs (35D30) Initial value problems for higher-order parabolic equations (35K30) Strong solutions to PDEs (35D35) Statistical mechanics of nanostructures and nanoparticles (82D80) PDEs in connection with statistical mechanics (35Q82)

Related Items (1)

Pullback attractor of a non-autonomous order-\(2 \gamma\) parabolic equation for an epitaxial thin film growth model

Cites Work

• Global well-posedness for the 4D epitaxial growth models
• Gradient bounds for a thin film epitaxy equation
• Global well-posedness and regularity criteria for epitaxial growth models
• Second-order Convex Splitting Schemes for Gradient Flows with Ehrlich–Schwoebel Type Energy: Application to Thin Film Epitaxy
• Thin film epitaxy with or without slope selection
• Stability Analysis of Large Time‐Stepping Methods for Epitaxial Growth Models

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