Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors

DOI10.1007/S11182-012-9755-ZzbMath1253.82092OpenAlexW1971152324MaRDI QIDQ1762241

V. I. Gaman

Publication date: 23 November 2012

Published in: Russian Physics Journal (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11182-012-9755-z

zbMATH Keywords

sensorchemisorptionoxygennitrogen dioxideactivation energy of desorptionadsorption heatchannel conductivityover-barrier conductivity

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Cites Work

• Influence of oxygen adsorption on the surface potential of a metal oxide semiconductor

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