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Influence of oxygen adsorption on the surface potential of a metal oxide semiconductor

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Publication:1762272
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DOI10.1007/S11182-012-9721-9zbMath1253.82093OpenAlexW2069081388MaRDI QIDQ1762272

V. I. Gaman

Publication date: 23 November 2012

Published in: Russian Physics Journal (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s11182-012-9721-9


zbMATH Keywords

surface potentialchemisorptionadsorption heatmetal oxide semiconductorsurface density of oxygen ions


Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)


Related Items (2)

Physical principles of operation of oxidizing gas sensors based on metal oxide semiconductors ⋮ An analysis of flexural wave band gaps of locally resonant beams with continuum beam resonators







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