A parallel adaptive finite volume method for nanoscale double-gate MOSFETs simulation

DOI10.1016/J.CAM.2004.06.001zbMath1073.82627OpenAlexW1987437045MaRDI QIDQ1765427

Shao-Ming Yu, Yiming Li

Publication date: 23 February 2005

Published in: Journal of Computational and Applied Mathematics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.cam.2004.06.001

zbMATH Keywords

domain decompositionparallel algorithmsemiconductor device simulationnanoscale deviceadaptive computational methoddouble-gate MOSFETsquantum correction model

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Parallel numerical computation (65Y05)

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Cites Work

• A parallel monotone iterative method for the numerical solution of multi-dimensional semiconductor Poisson equation
• Structured and unstructured grid adaptation schemes for numerical modeling of field problems
• A posteriori error estimation for finite-volume solutions of hyperbolic conservation laws
• A novel parallel adaptive Monte Carlo method for nonlinear Poisson equation in semiconductor devices
• Error Estimates on the Approximate Finite Volume Solution of Convection Diffusion Equations with General Boundary Conditions
• A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices

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