Nonlinear boundary value problems describing mobile carrier transport in semiconductor devices.

DOI10.1023/A:1013708427592zbMath1059.35026MaRDI QIDQ1771838

V. M. Chistyakov, E. Z. Borevich

Publication date: 19 April 2005

Published in: Applications of Mathematics (Search for Journal in Brave)

Full work available at URL: https://eudml.org/doc/33093

zbMATH Keywords

stabilitynonlinear boundary value problemglobal bifurcationsemiconductorscarrier transportconstant densities of ionized impuritiesinterior transition layer phenomena

Mathematics Subject Classification ID

Stability in context of PDEs (35B35) Nonlinear first-order PDEs (35F20) Statistical mechanics of semiconductors (82D37) Bifurcations in context of PDEs (35B32)

Cites Work

• Unnamed Item
• Geometric theory of semilinear parabolic equations
• Phase-plane solutions to some singular perturbation problems
• Boundary and interior transition layer phenomena for pairs of second- order differential equations
• Nonlinear singular perturbation phenomena: theory and applications
• Some global results for nonlinear eigenvalue problems
• Bifurcation from simple eigenvalues
• Transition layers in singular perturbation problems
• An Example for Bifurcation of Solutions of the Basic Equations for Carrier Distributions in Semiconductors

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