A quantum corrected energy-transport model for nanoscale semiconductor devices
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Publication:1777049
DOI10.1016/j.jcp.2004.10.006zbMath1143.82324OpenAlexW2054816836MaRDI QIDQ1777049
Ren-Chuen Chen, Jinn-Liang Liu
Publication date: 12 May 2005
Published in: Journal of Computational Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jcp.2004.10.006
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Cites Work
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- Monotone iterative methods for the adaptive finite element solution of semiconductor equations
- Correspondence between quantum and classical motion: comparing Bohmian mechanics with a smoothed effective potential approach
- Object-oriented programming of adaptive finite element and finite volume methods
- The Quantum Hydrodynamic Model for Semiconductor Devices
- Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
- The Stationary Current-Voltage Characteristics of the Quantum Drift-Diffusion Model
- On Weak Residual Error Estimation
- A new parallel adaptive finite volume method for the numerical simulation of semiconductor devices
