Initial transients of solutions of the semiconductor device equations

DOI10.1016/0898-1221(90)90263-JzbMath0788.65120OpenAlexW1971745641MaRDI QIDQ1813632

Peter Szmolyan

Publication date: 25 June 1992

Published in: Computers \& Mathematics with Applications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/0898-1221(90)90263-j

zbMATH Keywords

singular perturbationnumerical examplesmethod of characteristicsPoisson equationconvection-diffusion equationssemiconductor devicesinitial layer equations

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Numerical aspects of the method of characteristics for initial value and initial-boundary value problems involving PDEs (65M25) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)

Related Items (1)

Convergence of a finite element method for the drift-diffusion semiconductor device equations: the zero diffusion case

Cites Work

• A system of convection-diffusion equations with small diffusion coefficient arising in semiconductor physics
• A Singular Perturbation Analysis of the Transient Semiconductor Device Equations
• Time-dependent solutions of a nonlinear system arising in semiconductor theory
• An Asymptotic Analysis of a Transient p-n-Junction Model
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