Application of LBI techniques to solution of the transient, multidimensional semiconductor equation

DOI10.1016/0021-9991(87)90065-9zbMath0616.65131OpenAlexW2085333201MaRDI QIDQ1821538

H. L. Grubin, J. P. Kreskovsky

Publication date: 1987

Published in: Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/0021-9991(87)90065-9

zbMATH Keywords

stabilityholesPoisson's equationaccuracyiterative methodMaxwell equationelectronsalternating directionelectrostatic potential in semiconductorsLBI algorithmtransient charge collection simulation

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) Partial differential equations of mathematical physics and other areas of application (35Q99) Applications to the sciences (65Z05) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22)

Related Items (2)

A SPLITTING SCHEME FOR A DRIFT‐DIFFUSION MODEL OF SEMICONDUCTORS ⋮ Accelerating the transient simulation of semiconductor devices using filter-bank transforms

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