The influence of dependence of HEMT's model parameters on gate and drain voltages on upper boundary of LNA's linearity

DOI10.1016/S0045-7906(01)00006-4zbMath1006.68611MaRDI QIDQ1859968

L. I. Averina, A. M. Bobreshov, A. I. Lopatin

Publication date: 20 February 2003

Published in: Computers and Electrical Engineering (Search for Journal in Brave)

zbMATH Keywords

modellingnonlinear propertieshigh electron mobility transistor

Mathematics Subject Classification ID

Nonnumerical algorithms (68W05) Computing methodologies and applications (68U99)

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