Nonequilibrium and ballistic transport, and backscattering in decanano HEMTs: A Monte Carlo simulation study.

DOI10.1016/S0378-4754(02)00223-9zbMath1034.82513OpenAlexW2001546811MaRDI QIDQ1873036

Yanyan Li

Publication date: 19 May 2003

Published in: Mathematics and Computers in Simulation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/s0378-4754(02)00223-9

zbMATH Keywords

velocityPerformanceBackscatteringAverageBallistic transportHigh electron mobility transistorsMonte Carlo device simulations

Mathematics Subject Classification ID

Monte Carlo methods (65C05) Statistical mechanics of semiconductors (82D37)

Cites Work

• Molecular dynamics extensions of Monte Carlo simulation in semiconductor device modeling
• Equation of State Calculations by Fast Computing Machines

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