Electromigration of intergranular voids in metal films for microelectronic interconnects.
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Publication:1873405
DOI10.1016/S0021-9991(03)00070-6zbMath1036.78514OpenAlexW2011513821MaRDI QIDQ1873405
Igor Ravve, Moshe Israeli, Amir Z. Averbuch
Publication date: 20 May 2003
Published in: Journal of Computational Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/s0021-9991(03)00070-6
Finite difference methods applied to problems in optics and electromagnetic theory (78M20) Technical applications of optics and electromagnetic theory (78A55)
Related Items (7)
A parametric finite element method for fourth order geometric evolution equations ⋮ A structure‐preserving finite element approximation of surface diffusion for curve networks and surface clusters ⋮ Grain boundary migration with thermal grooving effects: a numerical approach ⋮ Surface evolution in bare bamboo-type metal lines under diffusion and electric field effects ⋮ Parametric finite element approximations for anisotropic surface diffusion with axisymmetric geometry ⋮ A theoretical analysis of the electromigration-induced void morphological evolution under high current density ⋮ An energy stable finite difference method for anisotropic surface diffusion on closed curves
Uses Software
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