Electromigration of intergranular voids in metal films for microelectronic interconnects.

DOI10.1016/S0021-9991(03)00070-6zbMath1036.78514OpenAlexW2011513821MaRDI QIDQ1873405

Igor Ravve, Moshe Israeli, Amir Z. Averbuch

Publication date: 20 May 2003

Published in: Journal of Computational Physics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/s0021-9991(03)00070-6

zbMATH Keywords

finite difference schemeRunge-Kutta integration schemestatic Laplace equation

Mathematics Subject Classification ID

Finite difference methods applied to problems in optics and electromagnetic theory (78M20) Technical applications of optics and electromagnetic theory (78A55)

Related Items (7)

A parametric finite element method for fourth order geometric evolution equations ⋮ A structure‐preserving finite element approximation of surface diffusion for curve networks and surface clusters ⋮ Grain boundary migration with thermal grooving effects: a numerical approach ⋮ Surface evolution in bare bamboo-type metal lines under diffusion and electric field effects ⋮ Parametric finite element approximations for anisotropic surface diffusion with axisymmetric geometry ⋮ A theoretical analysis of the electromigration-induced void morphological evolution under high current density ⋮ An energy stable finite difference method for anisotropic surface diffusion on closed curves

Uses Software

• SERBA

Cites Work

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• Free Energy of a Nonuniform System. I. Interfacial Free Energy
• Computation for electromigration in interconnects of microelectronic devices

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