Modeling and simulation of sublimation growth of SiC bulk single crystals

DOI10.4171/IFB/101zbMath1081.35117OpenAlexW2017222967MaRDI QIDQ1884568

Olaf Klein, Peter Philip, Juergen Sprekels

Publication date: 1 November 2004

Published in: Interfaces and Free Boundaries (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.4171/ifb/101

zbMATH Keywords

solid phaseindustrial applicationslasersfree boundariesphysical vapor transportdiffuse-gray radiationgas phaseelectronic and optoelectronic devicesNonlinear heat transportnonlocal interface conditionssemiconductor substrate

Mathematics Subject Classification ID

Related Items (11)

Regularization of state-constrained elliptic optimal control problems with nonlocal radiation interface conditions ⋮ Mathematical modeling of Czochralski type growth processes for semiconductor bulk single crystals ⋮ Noncompactness of integral operators modeling diffuse-gray radiation in polyhedral and transient settings ⋮ Weak solutions to a time-dependent heat equation with nonlocal radiation boundary condition and arbitrary \(p\)-summable right-hand side. ⋮ Higher \(L^p\) regularity for vector fields that satisfy divergence and rotation constraints in dual Sobolev spaces, and application to some low-frequency Maxwell equations ⋮ Second-order sufficient optimality conditions for a semilinear optimal control problem with nonlocal radiation interface conditions ⋮ Existence for the stationary MHD-equations coupled to heat transfer with nonlocal radiation effects ⋮ Optimal Control of Interface Problems withhp-finite Elements ⋮ Existence of weak solutions to the time-dependent MHD equations coupled to the heat equation with nonlocal radiation boundary conditions ⋮ Macro- and microsimulations for a sublimation growth of SiC single crystals ⋮ Weak solutions to a stationary heat equation with nonlocal radiation boundary condition and right‐hand side in L^p (p⩾1)

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