A direct approach to solving the drift-diffusion model equations for use in certain MOSFET devices

DOI10.1016/0895-7177(95)00152-RzbMath0835.65152OpenAlexW1992296718MaRDI QIDQ1903393

Jerome Spanier, Jukka Sarvas

Publication date: 21 March 1996

Published in: Mathematical and Computer Modelling (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/0895-7177(95)00152-r

zbMATH Keywords

drift-diffusion equationsimplicit methodsMOSFETsemiconductor device modelingasymptotic matching methodscurrent-voltage relationshipsmetal oxide semiconductor field effect transistorsvariable doping

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Technical applications of optics and electromagnetic theory (78A55) Applications to the sciences (65Z05)

Cites Work

• Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling
• Singular Perturbations and a Free Boundary Problem in the Modeling of Field-Effect Transistors

This page was built for publication: A direct approach to solving the drift-diffusion model equations for use in certain MOSFET devices