Mathematical model of the process of growing single-crystal silicide films on silicon

DOI10.1007/BF01259272zbMath0839.73004OpenAlexW2047053884MaRDI QIDQ1909108

N. I. Khodakovskij, I. V. Medvedev, G. A. Chechko

Publication date: 18 March 1996

Published in: Journal of Mathematical Sciences (New York) (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/bf01259272

zbMATH Keywords

analytical expressiondiffusion flowannealing stagesannealing temperature

Mathematics Subject Classification ID

Anisotropy in solid mechanics (74E10) Thermodynamics in solid mechanics (74A15)

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