A finite element method for the quantum hydrodynamic model for semiconductor devices

DOI10.1016/0898-1221(96)00015-6zbMath0846.76043OpenAlexW1982085828MaRDI QIDQ1912857

Zhang-Xin Chen

Publication date: 22 May 1996

Published in: Computers \& Mathematics with Applications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/0898-1221(96)00015-6

zbMATH Keywords

hysteresisconservation lawsmixed methodresonant tunneling diodecurrent-voltage curveshock-capturing Runge-Kutta discontinuous Galerkin method

Mathematics Subject Classification ID

Finite element methods applied to problems in fluid mechanics (76M10) Technical applications of optics and electromagnetic theory (78A55) Quantum hydrodynamics and relativistic hydrodynamics (76Y05)

Related Items

Least-squares finite element formulation for hydrodynamic modeling of semiconductor devices., Numerical approximation of the viscous quantum hydrodynamic model for semiconductors

Cites Work

• Quantum hydrodynamic simulation of hysteresis in the resonant tunneling diode
• TVB Runge-Kutta Local Projection Discontinuous Galerkin Finite Element Method for Conservation Laws II: General Framework
• Analysis of mixed methods using conforming and nonconforming finite element methods
• The Quantum Hydrodynamic Model for Semiconductor Devices
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