A perturbation approach for low frequency noise in junction field effect transistors

DOI10.1016/0096-3003(95)00091-7zbMath0846.65075OpenAlexW2081328793MaRDI QIDQ1914616

Danilo Erricolo, Riccardo Sacco, Emilio Gatti

Publication date: 26 September 1996

Published in: Applied Mathematics and Computation (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/0096-3003(95)00091-7

zbMATH Keywords

numerical resultsbox methodlow frequency noisesemiconductor device equationsjunction field effect transistors

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Technical applications of optics and electromagnetic theory (78A55) Finite difference methods for boundary value problems involving PDEs (65N06) Applications to the sciences (65Z05)

Related Items (1)

Wavelet-based transistor parameter estimation

Uses Software

• SPARSPAK

Cites Work

• Unnamed Item
• Finite element methods (Part 1)
• Convergence of a second-order accurate Petrov-Galerkin scheme for convection-diffusion problems in semiconductors
• Some Error Estimates for the Box Method
• Two-Dimensional Exponential Fitting and Applications to Drift-Diffusion Models

This page was built for publication: A perturbation approach for low frequency noise in junction field effect transistors