Enriched residual free bubbles for semiconductor device simulation

DOI10.1007/s00466-011-0658-6zbMath1312.78008OpenAlexW2031190541MaRDI QIDQ1937034

Yanyan Li

Publication date: 11 February 2013

Published in: Computational Mechanics (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s00466-011-0658-6

zbMATH Keywords

finite elementstabilisationsemiconductor device simulationresidual-free bubble enrichment

Mathematics Subject Classification ID

Finite element, Galerkin and related methods applied to problems in optics and electromagnetic theory (78M10)

Related Items

Simulation of semiconductor devices with a local numerical approach

Cites Work

• Unnamed Item
• Performance of a parallel algebraic multilevel preconditioner for stabilized finite element semiconductor device modeling
• Numerical simulation of semiconductor devices
• Streamline upwind/Petrov-Galerkin formulations for convection dominated flows with particular emphasis on the incompressible Navier-Stokes equations
• A relationship between stabilized finite element methods and the Galerkin method with bubble functions
• Further considerations on residual-free bubbles for advective-diffusive equations
• Comparative study of finite element formulations for the semiconductor drift-diffusion equations
• Performance of a Petrov-Galerkin algebraic multilevel preconditioner for finite element modeling of the semiconductor device drift-diffusion equations
• SEMICONDUCTOR DEVICE MODELING USING FLUX UPWIND FINITE ELEMENTS
• Numerical Methods for Semiconductor Device Simulation
• Semiconductor device modelling from the numerical point of view