Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle
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Publication:1939398
DOI10.1007/s00161-011-0217-6zbMath1263.82061OpenAlexW1993133250MaRDI QIDQ1939398
Vito Dario Camiola, Giovanni Mascali, Vittorio Romano
Publication date: 4 March 2013
Published in: Continuum Mechanics and Thermodynamics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s00161-011-0217-6
Finite difference methods for initial value and initial-boundary value problems involving PDEs (65M06) Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70) PDEs in connection with statistical mechanics (35Q82)
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