External noise effects in doped semiconductors operating under sub-THz signals

DOI10.1016/S0034-4877(12)60037-8zbMath1267.82134MaRDI QIDQ1942963

Davide Valenti, Dominique Persano Adorno, Nicola Pizzolato, Bernardo Spagnolo

Publication date: 14 March 2013

Published in: Reports on Mathematical Physics (Search for Journal in Brave)

zbMATH Keywords

Monte Carlo simulationstransport propertiesfluctuations and noise processes

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of nanostructures and nanoparticles (82D80)

Related Items (5)

Charge-particles transport in semiconductors characterized by a generalized Langevin equation with a fractional noise ⋮ Modeling of Sensory Characteristics Based on the Growth of Food Spoilage Bacteria ⋮ Noise Induced Phenomena in the Dynamics of Two Competing Species ⋮ Nonequilibrium electron spin relaxation in n-type doped GaAs sample ⋮ Stochastic resonance in a fractional oscillator driven by multiplicative quadratic noise

Cites Work

• Role of the initial conditions on the enhancement of the escape time in static and fluctuating potentials

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