Numerical simulation of the smooth quantum hydrodynamic model for semiconductor devices

DOI10.1016/S0045-7825(99)00180-2zbMath0966.76100MaRDI QIDQ1970137

Carl L. Gardner, Christian Ringhofer

Publication date: 16 August 2001

Published in: Computer Methods in Applied Mechanics and Engineering (Search for Journal in Brave)

zbMATH Keywords

quantum hydrodynamic modelresonant tunneling diodeelectron tunnelingquantum semiconductor devicesconservative upwind discretizationquantum transport effects

Mathematics Subject Classification ID

Finite difference methods applied to problems in fluid mechanics (76M20) Statistical mechanics of semiconductors (82D37) Quantum hydrodynamics and relativistic hydrodynamics (76Y05)

Related Items (2)

SIMULATION OF SOME QUANTUM MODELS FOR SEMICONDUCTORS ⋮ Numerical approximation of the viscous quantum hydrodynamic model for semiconductors

Cites Work

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• Global approximate Newton methods
• Quantum hydrodynamic simulation of hysteresis in the resonant tunneling diode
• ON THE WELL‐POSEDNESS OF THE TWO‐DIMENSIONAL HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES
• The Quantum Hydrodynamic Model for Semiconductor Devices
• Approximation of Thermal Equilibrium for Quantum Gases with Discontinuous Potentials and Application to Semiconductor Devices

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