Estimation of the reset voltage in resistive RAMs using the charge-flux domain and a numerical method based on quasi-interpolation and discrete orthogonal polynomials
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Publication:1997630
DOI10.1016/j.matcom.2018.09.028OpenAlexW2908350174WikidataQ128666594 ScholiaQ128666594MaRDI QIDQ1997630
Publication date: 2 March 2021
Published in: Mathematics and Computers in Simulation (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.matcom.2018.09.028
Numerical approximation and computational geometry (primarily algorithms) (65Dxx) Numerical analysis (65-XX) Approximations and expansions (41Axx) Approximations and expansions (41-XX)
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Cites Work
- Polynomial pattern finding in scattered data
- Orthogonal polynomials (in Matlab)
- An in-depth study on WENO-based techniques to improve parameter extraction procedures in MOSFET transistors
- A comprehensive characterization of the threshold voltage extraction in MOSFETs transistors based on smoothing splines
- The calculation of integrals involving \(B\)-splines by means of recursion relations
- A spline quasi-interpolation based method to obtain the reset voltage in resistive RAMs in the charge-flux domain
- The Approximate Solution of an Integral Equation Using High-Order Gaussian Quadrature Formulas
- A practical guide to splines.
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