Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations

DOI10.1016/j.camwa.2019.06.007zbMath1443.65325OpenAlexW2952609764WikidataQ127681804 ScholiaQ127681804MaRDI QIDQ2004436

Patricio Farrell, Dirk Peschka

Publication date: 7 October 2020

Published in: Computers \& Mathematics with Applications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.camwa.2019.06.007

zbMATH Keywords

finite element methodfinite volume methodconvergence orderScharfetter-Gummel schemenonlinear diffusion and diffusion enhancementvan Roosbroeck system for semiconductors

Mathematics Subject Classification ID

Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Finite volume methods for boundary value problems involving PDEs (65N08)

Related Items (4)

A physics-based strategy for choosing initial iterate for solving drift-diffusion equations ⋮ Contrast structures in the reaction-advection-diffusion problem appearing in a drift-diffusion model of a semiconductor in the case of nonsmooth reaction ⋮ Challenges in Drift-Diffusion Semiconductor Simulations ⋮ Modeling and numerical simulation of dissolved oxygen and biochemical oxygen demand concentrations with Holling type III kinetic relationships

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