A new approach to numerical simulation of charge transport in double gate-MOSFET
DOI10.1016/j.amc.2018.09.030zbMath1429.65236OpenAlexW2895133251MaRDI QIDQ2008027
Boris Semisalov, Alexander Blokhin
Publication date: 22 November 2019
Published in: Applied Mathematics and Computation (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.amc.2018.09.030
hydrodynamical modelpseudo-spectral methodstabilization methodnumerical simulationsDG-MOSFETalgorithm without saturation
Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs (65M12) Statistical mechanics of semiconductors (82D37) Spectral, collocation and related methods for initial value and initial-boundary value problems involving PDEs (65M70)
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Cites Work
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