Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements

DOI10.1515/MCMA-2020-2077zbMath1469.65013OpenAlexW3097217274MaRDI QIDQ2026636

Dmitrii Y. Protasov, Evgenia Kablukova, Konstantin S. Zhuravlev, K. K. Sabel'fel'd

Publication date: 20 May 2021

Published in: Monte Carlo Methods and Applications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1515/mcma-2020-2077

zbMATH Keywords

Boltzmann equationdrift velocityphononsheterostructuresGaN semiconductorssatellite valleys

Mathematics Subject Classification ID

Probabilistic models, generic numerical methods in probability and statistics (65C20) Monte Carlo methods (65C05) Applications to the sciences (65Z05)

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