The transition from generation-recombination noise in bulk semiconductors to discrete switching in small-area semiconductors

DOI10.1016/j.physa.2021.125748OpenAlexW3170135757MaRDI QIDQ2066253

Ferdinand Grüneis

Publication date: 13 January 2022

Published in: Physica A (Search for Journal in Brave)

Full work available at URL: https://arxiv.org/abs/2106.01889

zbMATH Keywords

statistical physicsMOSFETsgeneration-recombination noisenoise processes and phenomena in electronic transportsmall-area semiconductors

Mathematics Subject Classification ID

Statistical mechanics, structure of matter (82-XX)

Related Items (1)

1/f noise under drift and thermal agitation in semiconductor materials

Cites Work

• An alternative form of Hooge's relation for 1/f noise in semiconductor materials
• Estimation of the lowest limit of \(1/f\) noise in semiconductor materials
• The Statistical Energy-Frequency Spectrum of Random Disturbances
• Noise in Semiconductors: Spectrum of a Two-Parameter Random Signal
• Mathematical Analysis of Random Noise
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