Topological Anderson insulators induced by random binary disorders

DOI10.1016/J.PHYSLETA.2022.128004zbMath1489.82098arXiv2202.11905OpenAlexW4213218186MaRDI QIDQ2079069

Dan-Wei Zhang, Guoqing Zhang, Shu-Na Liu, Ling-Zhi Tang

Publication date: 4 March 2022

Published in: Physics Letters. A (Search for Journal in Brave)

Full work available at URL: https://arxiv.org/abs/2202.11905

zbMATH Keywords

bulk state localizationrandom binary disordertopological Anderson insulator

Mathematics Subject Classification ID

Disordered systems (random Ising models, random Schrödinger operators, etc.) in equilibrium statistical mechanics (82B44) Statistical mechanics of superconductors (82D55) Statistical mechanics of semiconductors (82D37)

Cites Work

• Topological insulators. Dirac equation in condensed matter
• A short course on topological insulators. Band structure and edge states in one and two dimensions
• Viscosity of the Electron Gas in Metals
• Localization properties of the periodic random Anderson model

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