A stochastic model for diffusion in a semiconductor layer under the effect of an external potential and non-uniform temperature

DOI10.1016/j.physa.2022.127197OpenAlexW4221046758MaRDI QIDQ2128739

Giuseppe Pellicane, Berhanu Aragie, Tesema Daba

Publication date: 22 April 2022

Published in: Physica A (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.physa.2022.127197

zbMATH Keywords

stochastic resonancehoppingsemiconductor layercharge carrier dynamicsimpurities dynamicslattice traps

Mathematics Subject Classification ID

Statistical mechanics, structure of matter (82-XX)

Cites Work

• Unnamed Item
• State observer for stochastic resonance in bistable system
• A novel underdamped continuous unsaturation bistable stochastic resonance method and its application
• Stochastic Resonance of Charge Carriers Diffusion in a Semiconductor Layer under a Nonuniform Low Temperature

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